Abstract Static random‐access memory (SRAM) plays a vital component of digital systems. The main issue of SRAM cells is power leakage, which results in an increase in chip area. Therefore this manuscript proposes a shorted‐gate fin‐type field‐effect transistor based SRAM cell utilizing leakage control transistor technique (SGFinFETs‐SRAM‐LECTOR) for decreasing the leakage power delay by improving the static noise margins (SNMs) together with power delay product (PDP). Here, the SGFinFETs‐SRAM‐LECTOR is primarily applied to stacking enhancement for lessening the leakage power dissipation (LPD). Two more transistors are used in LECTOR for reducing the leakage current with delay, which is based on transistor stacking. LECTOR employs two more transistors that are connected in series between pull‐up and pull‐down networks that means additional SG FinFETs PMOS transistor insertions amongst the pull‐up network and output terminal, additional SG FinFETs NMOS transistor insertions amidst the pull down network and output terminal. These additional transistors can decrease the leakage current. The simulation of the proposed approach is implemented in HSPICE simulation tool. Some metrics are computed to validate the efficacy of the proposed approach. Finally, the proposed technique reaches 11.31%, 51.47%, 45.46% less read delay, 44.44%, 26.33%, 33.45% less write delay, 36.12%, 45.28%, 26.45% less read power, 34.5%, 33.56%, 22.41% less write power, 37.4%, 15.3%, 26.54% high read SNM, 33.67%, 35.8%,12.09% high write SNM when analyzed to the existing models.