Antiferroelectric tunnel junctions of La 0.7 Sr 0.3 MnO 3 /PbZrO 3 /Co fabricated by pulsed laser deposition and sputtering are reported for the first time. The current–voltage curves highlight the monostability type (threshold) resistive switching corresponding to the antiferroelectric behavior for the PbZrO 3 barrier down to ≈4 nm thickness. Tunneling electroresistance values up to 10 9 %, which is much higher than the usual values in ferroelectric tunnel junctions, are observed at room temperature. The resistive switching is attributed to a combination of the nonpolar to polar switching induced by an external field, leading to significant changes in the barrier heights, and the crossover from direct tunneling to Fowler–Nordheim tunneling. At low temperatures, the devices exhibit an inverse tunneling magnetoresistance, in which the resistance is higher in the parallel magnetization state, most probably caused by interfacial Zr and Co ions' hybridization influence on the spin polarization.

Geanina Apachitei

Jonathan J. P. Peters

Ana M. Sanchez

Dong Jik Kim

Marin Alexe

Advanced Electronic Materials

ADVANCED ELECTRONIC MATERIALS 是一个跨学科论坛，用于在材料科学、物理学以及电子和磁性材料工程领域进行同行评议、高质量、高影响力的研究。除了基础研究外，它还包括电子和磁性材料、自旋电子学、电子学、器件物理和工程、微纳机电系统和有机电子学的物理和物理特性研究。

Advanced Electronic Materials is an interdisciplinary forum dedicated to high-quality, peer-reviewed research in the fields of materials science, physics, and electronic and magnetic materials engineering. The journal encompasses not only fundamental research but also studies on the physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro-nano electromechanical systems, and organic electronics.

《Advanced Electronic Materials》是一个跨学科的论坛，专注于材料科学、物理学以及电子和磁性材料工程领域的高质量、同行评审研究。该期刊不仅涵盖基础研究，还包括电子和磁性材料、自旋电子学、电子学、器件物理与工程、微纳机电系统以及有机电子学的物理特性研究。

Category	Quartile
材料科学	2
材料科学, 物理应用	2
材料科学, 材料科学综合	3
材料科学, 纳米科技	3

Antiferroelectric Tunnel Junctions

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Journal Info

Category	Quartile
PHYSICS, APPLIED	1