The Czochralski method of crystal growth is used since 1950s in scientic and industrial laboratories for growth of single crystals of large size and high quality.The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.

A. Bukowski

Acta Physica Polonica A

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Category	Quartile
物理与天体物理	4
物理与天体物理, 物理综合	4

Czochralski-Grown Silicon Crystals for Microelectronics

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Journal Info

Category	Quartile
PHYSICS, MULTIDISCIPLINARY	4