Advanced Materials for Optics and Electronics

The first room-temperature liquid, flash-vaporizable barium compounds were prepared by reacting barium beta-diketonates with alkyl-substituted triamine and tetramine ligands. For example, barium bis(2,2,6,6-tetramethylheptane-3,5-dionate) (Ba(thd)2) reacts with N,N′,N′′-triamyldiethylenetriamine (tadeta) to form a viscous liquid that is miscible with additional amine and organic solvents, forming low-viscosity solutions. Thermal decomposition studies showed that Ba(thd)2·tadeta is more stable than a similar amine complex of barium 2,2,6-trimethylheptane-3,5-dionate (Ba(3hd)2). This difference in thermal stability can possibly be explained by a beta-hydrogen elimination mechanism operating only in the latter barium compound. Copyright © 2000 John Wiley & Sons, Ltd.

Roy G Gordon

Se�n Barry

Randy N. R Broomhall-Dillard

Daniel J Teff

Synthesis and solution decomposition kinetics of flash-vaporizable liquid Barium Beta-diketonates

闪蒸可气化液体钡β-二酮的合成与溶液分解动力学

Volatile trends are established for a series of MU(β-diketonate)n complexes, where MU = Cu (n = 2); Al, Sc, Cr, Fe, Co, Ga (n = 3); Zr (n = 4) and β-diketonate = acetylacetonate (acac), trifluoroacetylacetonate (tfac), hexafluoroacetylacetonate (hfac) and 2,2,6,6-tetramethyl-3,5-heptanedionate (tmhd). Sublimation enthalpies (ΔHsub) were calculated from thermogravimetric analysis (TGA) data, which show that the dependence of ΔHsub on the number and type of intermolecular interactions appears to be more substantial than molecular mass effects. Irrespective of the metal, the ΔHsub values for the MU(tmhd)3 derivative have a ΔHsub value of between 93 and 99% of that of the MU(acac)3 derivative. In contrast, the MU(tfac)3 and MU(hfac)3 derivatives have ΔHsub values of ca. 82% and 54% of the values for the corresponding MU(acac)3. Similar trends are observed for MU(β-diketonate)2 and MU(β-diketonate)4 derivatives. The relationship between the ΔHsub and (Tsub) of the substituted β-diketonate derivatives as compared with the values for parent MU(acac)n may be used to predict either quantity for a range of MU(β-diketonate)n complexes where the values for MU(acac)n are known. Using the TGA sublimation data, vapour pressures have been calculated for each of the MU(β-diketonate)n complexes. Copyright © 2000 John Wiley & Sons, Ltd.

Bradley D Fahlman

Andrew R Barron

Substituent effects on the volatility of metal ?-diketonates

取代基对金属β-二酮挥发性的影响

This paper describes a new amorphous wide-band gap semiconductor with photoluminescence (PL) at room temperature. The amorphous PbTiO3 was prepared by a sol–gel-like process in powder and thin film form. The optical property and the PL behaviour showed a direct relation to the amorphous structure. The PL peak energy can be controlled by the change of the exciting surge energy. Copyright © 2000 John Wiley & Sons, Ltd.

E. R Leite

F. M Pontes

E. C Paris

C. A Paskocimas

E. J. H Lee

E Longo

P. S Pizani

J. A Varela

V Mastelaro

Amorphous lead titanate: a new wide-band gap semiconductor with photoluminescence at room temperature

非晶态钛酸铅：一种具有室温光致发光的新型宽带隙半导体

A polymeric precursor method was used to synthesis PbTiO3 amorphous thin film processed at low temperature. The luminescence spectra of PbTiO3 amorphous thin films at room temperature revealed an intense single-emission band in the visible region. The visible emission band was found to be dependent on the thermal treatment history. Photoluminescence properties versus different annealing temperatures were investigated. The experimental results (XRD, AFM, PL) indicate that the nature of photoluminescence (PL) must be related to the disordered structure of PbTiO3 amorphous thin films. Copyright © 2000 John Wiley & Sons, Ltd.

C. E. M Campos

F Lanciotti

Correlation between the surface morphology and structure and the photoluminescence of amorphous PbTiO3 thin films obtained by the chemical route

化学法制备的无定形PbTiO3薄膜表面形貌与结构及其光致发光的相关性

The electrosynthesis of new mixed polymers is described, starting with the anodic oxidation of a mixture of 3,4-ethylenedioxythiophene: EDOT and dicyanomethylenefluorene: DiCNFl. The resulting mixed polymer possesses a very high electrochemical stability and good electrochromic properties. Copyright © 2000 John Wiley & Sons, Ltd.

Jo�lle Rault-Berthelot

Eug�ne Raoult

New electrochemically synthesized mixed polymers with very high electrochemical stability

新型电化学合成的高电化学稳定性混合聚合物

The present paper reports on the differential scanning calorimetric (DSC) behaviour of glassy Se80Te20 containing Ag up to 10 at%. DSC runs were taken at different heating rates. Well-defined endothermic and exothermic peaks were obtained at glass transition and crystallization temperatures. The glass transition temperature (Tg) and crystallization temperature (Tc) increase with the increase in heating rate. Tg and Tc both decrease with increase in Ag concentration. The activation energies for glass transition and crystallization also decrease with Ag incorporation in the Se80Te20 binary alloy. Copyright Â© 2000 John Wiley & Sons, Ltd.

D Sharma

R. K Shukla

A Singh

A. K Nagpal

A Kumar

Effect of Ag addition on glass transition and crystallization in Se80Te20 glass

Ag添加对Se80Te20玻璃玻璃化转变和结晶的影响

Yan Shao

Yong Qiu

Wenhua Hu

Xiaoyin Hong

A novel asymmetric complex for organic electroluminescence

一种新型有机电致发光不对称复合物

We have attempted to investigate the non-linear behaviour in the characteristics of organic electroluminescent devices (OELDs) fabricated with polyimide and an organometallic complex as a hole transport layer (HTL) and an emission layer, respectively. The thickness of the polyimide HTL and the kind of metal cathode were varied to study the mechanism of the charge conduction and the electroluminescence (EL). The conventional linear models well explained the voltage-dependent charge injection and the current-dependent EL. New non-linear models proposed here predicted the characteristics almost completely, even though the physical meaning of the included parameters was not clearly defined. The OELD with the Mg cathode showed lower luminous efficiency in the high electric field than that with the Al cathode because of poor adhesion between Mg and Alq3. The maximum luminous efficiency was ca. 1.2 lm/W at 700 cd/m2 in the case of the Al cathode. The emission colour did not change for the OELD with the Mg cathode irrespective of the polyimide HTL, whereas the OELD with the Al cathode and the thick HTL showed a red-shifted EL of ca. 10 nm. Copyright © 2000 John Wiley & Sons, Ltd.

Youngkyoo Kim

Jihwan Keum

Jae‐Gyoung Lee

Hyuntak Lim

Chang‐Sik Ha

Non‐linear charge conduction and emission behaviour of OELD fabricated with Alq3 and TPD‐doped soluble polyimide

非线性电荷传导和发射行为的有机电致发光器件制备于Alq3和TPD掺杂的可溶性聚酰亚胺

Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS-CVD) emerged during 1999 as a new low-temperature dielectric deposition system combining earlier developments in injection liquid source CVD and excimer lamp assisted CVD. While the UVILS-CVD technique is still at an early stage of development, the reported results in the literature indicate that UVILS-CVD is a promising technique for the controlled deposition of ultra-thin high-k metal-oxide dielectrics for deep sub-micron CMOS devices at temperatures as low as 350 °C. As-deposited UVILS-CVD tantalum pentoxide dielectrics have been reported with refractive index values in the range 2.02 – 2.16, conventional capacitance – voltage characteristics, dielectric constants in the range 18 – 24, fixed oxide charge content of less than 5×1010 cm−1 and breakdown fields higher than 2 MV·cm−1. Annealing reduces the leakage currents by several orders of magnitude. The main characteristics of the UVILS-CVD technique reported to date in the literature are reviewed. Copyright © 2000 John Wiley & Sons, Ltd.

P. V Kelly

M. B Mooney

J. T Beechinor

B. J O'Sullivan

P. K Hurley

G. M Crean

J.‐Y Zhang

I. W Boyd

M Paillous

C Jimenez

J.‐P Senateur

Ultraviolet assisted injection liquid source chemical vapour deposition (UVILS‐CVD) of tantalum pentoxide

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基本数据	创刊年份: 1992，原创研究文献占比: ，自引率:， Gold OA占比:

Advanced Materials for Optics and Electronics

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