IEEE Transactions on Device and Materials Reliability
短名 | IEEE Trans. Device Mater. Relib. |
Journal Impact | 2.31 |
国际分区 | PHYSICS, APPLIED(Q2) |
期刊索引 | SCI Q3中科院 3 区 |
ISSN | 1530-4388, 1558-2574 |
h-index | 79 |
国内分区 | 工程技术(3区)工程技术工程电子与电气(3区)工程技术物理应用(3区) |
本出版物的范围包括但不限于以下可靠性:设备、材料、工艺、接口、集成微系统(包括 MEMS 和传感器)、晶体管、技术(CMOS、BICMOS 等)、集成电路(IC、SSI , MSI, LSI, ULSI, ELSI, ETC.), 薄膜晶体管应用。从概念阶段到研发再到制造规模扩大的每个阶段对此类实体的可靠性的测量和理解,为设备、材料、工艺、封装和其他必需品的可靠性提供了整体数据库。将产品成功推向市场。该可靠性数据库是满足客户期望的优质产品的基础。如此开发的产品具有高可靠性。将实现高质量,因为将发现产品弱点(根本原因分析)并根据最终产品进行设计。这种不断提高可靠性和质量的过程将产生卓越的产品。最后,可靠性和质量不是一回事。但从某种意义上说,可以或必须做的一切都是为了保证产品在客户条件下在现场成功运行。我们的目标是抓住这些进步。另一个目标是在电子材料和设备的可靠性领域集中交叉交流,并提供对影响可靠性的基本现象的基本理解。此外,该出版物是可靠性跨学科研究的论坛。总体目标是提供前沿/最先进的信息,这与创建可靠的产品至关重要。
期刊主页投稿网址涉及主题 | 工程类物理材料科学电气工程量子力学计算机科学光电子学热力学电子工程化学电压复合材料有机化学功率(物理)纳米技术可靠性(半导体)电信冶金晶体管可靠性工程数学操作系统 |
出版信息 | 出版商: Institute of Electrical and Electronics Engineers Inc.,出版周期: Quarterly,期刊类型: journal |
基本数据 | 创刊年份: 2001,原创研究文献占比: 98.21%,自引率:4.00%, Gold OA占比: 24.52% |
平均审稿周期 | 网友分享经验:较慢,6-12周 |
平均录用比例 | 网友分享经验:较易 |
期刊引文格式
这些示例是对学术期刊文章的引用,以及它们应该如何出现在您的参考文献中。
并非所有期刊都按卷和期组织其已发表的文章,因此这些字段是可选的。有些电子期刊不提供页面范围,而是列出文章标识符。在这种情况下,使用文章标识符而不是页面范围是安全的。
只有1位作者的期刊
有2位作者的期刊
有3位作者的期刊
有5位以上作者的期刊
书籍引用格式
以下是创作和编辑的书籍的参考文献的示例。
学位论文引用格式
网页引用格式
这些示例是对网页的引用,以及它们应该如何出现在您的参考文献中。
专利引用格式
最新文章
Bridging the Data Gap in Photovoltaics with Synthetic Data Generation
2024-9-1
Blank Page
2024-9-1
IEEE Transactions on Device and Materials Reliability Information for Authors
2024-9-1
IEEE Transactions on Device and Materials Reliability Publication Information
2024-9-1
Table of Contents
2024-9-1
Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond”
2024-9-1
IEEE Transactions on Device and Materials Reliability Information for Authors
2024-6-1
Table of Contents
2024-6-1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
2024-6-1
Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width
2024-6-1
Optimization of 3D IC Routing Based on Thermal Equalization Analysis
2024-6-1
Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
2024-6-1
IEEE Transactions on Device and Materials Reliability Publication Information
2024-6-1
Guest Editorial TDMR IIRW Special Section
2024-6-1
Blank Page
2024-6-1
Electro-Mechanical Properties of Molybdenum Thin Film On Polyethylene Terephthalate Subjected to Tensile Stress
2024-6-1
Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices
2024-6-1
Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond
2024-6-1
Front Cover
2024-6-1
TDDB Lifetime Reduction From Charging Damage in a 3D Vertical NAND Memory Technology
2024-6-1
Modeling of Temperature Rises at Focal-Plane-Array and Their Impact on the Performance of a CCD-Based Spaceborne Earth-Observing Imaging System
2024-6-1
Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs
2024-4-12
A Low-Area Overhead and Low-Delay Triple-Node-Upset Self-Recoverable Design Based on Stacked Transistors
2024-4-10
A DLTS Study on Deep Trench Processing Induced Trap States in Silicon Photodiodes
2024-3-27
Cause Analysis on the Abnormal Failure of SiC Power Modules During the HV-H3TRB Tests
2024-3-20
A Review: Breakdown Voltage Enhancement of GaN Semiconductors Based High Electron Mobility Transistors
2024-3-20
Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment
2024-3-1
Reliability and Optimization Simulation Study of Zero-Temperature-Delay Point in Digital Circuits for Advanced Technology
2024-3-1
Degradation and Reliability Modeling of EM Robustness of Voltage Regulators Based on ADT: An Approach and a Case Study
2024-3-1
Detection and Analysis of Stress Wave in MOSFET Under Gate-Source Overvoltage Failure
2024-3-1
PEAR: Unbalanced Inter-Page Errors Aware Read Scheme for Latency-Efficient 3-D NAND Flash
2024-3-1
Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5 nm Node Junctionless Multi-Nanowire FETs
2024-3-1
A Comprehensive Evaluation of Time-Dependent Dielectric Breakdown of CuAl₂ on SiO₂ for Advanced Interconnect Application
2024-3-1
Investigation on Electrical Properties of Printed Graphene Subjected to Aging, Ambient Environment and Gamma Radiation
2024-3-1
IEEE Transactions on Device and Materials Reliability Publication Information
2024-3-1
IEEE Transactions on Device and Materials Reliability Information for Authors
2024-3-1
Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability
2024-3-1
Blank Page
2024-3-1
A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process
2024-3-1
Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits
2024-3-1
Aging and Sintered Layer Defect Detection of Discrete MOSFETs Using Frequency Domain Reflectometry Associated With Parasitic Resistance
2024-3-1
TechRxiv: Share Your Preprint Research with the World!
2024-3-1
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications
2024-3-1
Investigation of the Long-Term Reliability of a Velostat-Based Flexible Pressure Sensor Array for 210 Days
2024-3-1
Characterization and Modeling of Hot Carrier Degradation Under Dynamic Operation Voltage
2024-3-1
Analyzing Total-Ionizing-Dose Induced Memory Window Degradation in Ferroelectric FinFET
2024-3-1
Special Issue on Semiconductor Design for Manufacturing (DFM)Joint Call for Papers
2024-3-1
Table of Contents
2024-3-1
Analysis of Multicrystalline Si Solar Cell Improvement Using Laser-Beam-Induced Current Technique
2024-2-19
Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model
2024-2-13
帮你贴心管理全部的文献
研飞ivySCI,高效的论文管理
投稿经验分享
分享我的经验,帮你走得更远