IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY 专注于太赫兹理论、技术和应用的原创研究，因为它们涉及涉及太赫兹波的产生、传输和检测的组件、设备、电路和系统。

IEEE Transactions on Terahertz Science and Technology focuses on original research in the field of terahertz science and technology, covering components, devices, circuits, and systems related to the generation, transmission, and detection of terahertz waves.

IEEE Transactions on Terahertz Science and Technology 专注于太赫兹科学与技术领域的原创研究，涵盖太赫兹波的产生、传输和检测相关的组件、设备、电路和系统。

IEEE Transactions on Terahertz Science and Technology

In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers.

Sascha Krause

Vladislav Mityashkin

Sergey Antipov

Gregory Goltsman

Denis Meledin

Vincent Desmaris

Victor Belitsky

Mariusz Rudzinski

Reduction of Phonon Escape Time for NbN Hot Electron Bolometers by Using GaN Buffer Layers

使用GaN缓冲层减少NbN热电子测辐射热计的声子逃逸时间

This article presents a design of terahertz (THz) patch antenna array with high gain and wideband features. The proposed array consists of eight subarrays printed on a single-layer high-frequency laminate and a power distribution network realized by a hollow waveguide made from a copper block. The simulated results show that the subarray can achieve an impedance bandwidth of 37% for the reflection coefficient < −10 dB with a peak gain of 15.2 dBi at 155 GHz. The 1-to-8 hollow-waveguide network has a simulated reflection coefficient below −14 dB and a simulated transmission loss smaller than 0.4 dB. A parametric analysis is implemented to determine the range of key parameters of the subarray and find out fabrication tolerance of the array at such high frequency. The measured results show that the proposed array achieves the reflection coefficient below −10 dB from 150 to 205 GHz. The measured 3-dB gain bandwidth of the proposed antenna array is 19.7% with a maximum gain of 21.9 dBi. These performances ensure that the proposed array is a promising candidate for THz communications.

Guang-Hua Sun

Hang Wong

A Hollow-Waveguide-Fed Planar Wideband Patch Antenna Array for Terahertz Communications

用于太赫兹通信的空心波导馈电平面宽带贴片天线阵列

In this article, we demonstrate an efficient terahertz single-pixel imaging system incorporating deep learning networks. Experimental results show that by combining a Hadamard single-pixel imaging system with the deep learning network, the sampling time per pattern can be reduced to 1/20 of the conventional system and the number of Hadamard patterns can be reduced to 10% of the pixels while maintaining high image quality with acceptable signal-to-noise ratio above 20 dB and structural similarity of more than 0.85. We thus expect this article to advance the development of a real-time terahertz single-pixel imaging system and promote its applications.

Yong-Le Zhu

Rong-Bin She

Wen-Quan Liu

Yuan-Fu Lu

Guang-Yuan Li

Deep Learning Optimized Terahertz Single-Pixel Imaging

深度学习优化的太赫兹单像素成像

This article presents a broadband THz power amplifier (PA) operating close to the maximum oscillation frequency ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f max ) with proposed power combining and stagger-tuned gain boosting techniques. A compact broadband power combiner based on the compensated three-conductor transmission line (T-line) balun is proposed to simultaneously achieve broadband matching and power combining. A 4-stage stagger-tuned gain boosting amplifier operating closely to <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f max is investigated to achieve a flattened power gain. Based on the proposed techniques, a broadband 300-GHz PA is implemented in a 130-nm SiGe BiCMOS process with <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f t / <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f max = 350/450 GHz. It exhibits a peak gain of 15 dB and 3-dB bandwidth of 67 GHz (247–314 GHz) with 2.5 V supply voltage. At 290 GHz, a 5-dBm maximum output power <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P OUT-MAX was measured with a 1-dB compressed output power <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OP −1 dB of 3.3 dBm and a maximum PAE of 1.19%. The measured output power <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P OUT-MAX and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OP -1dB of the PA are 2.2–5 dBm and 0.6–3.3 dBm over 250–300 GHz, respectively. To the best of our knowledge, this PA achieves the highest operational frequency and widest bandwidth compared with other works in SiGe/CMOS process operating closely to <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f max .

Xingcun Li

Wenhua Chen

Peigen Zhou

Yunfan Wang

Fei Huang

Shuyang Li

Jixin Chen

Zhenghe Feng

A 250–310 GHz Power Amplifier With 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System

用于太赫兹无线系统的130纳米SiGe BiCMOS工艺中峰值增益为15dB的250–310 GHz功率放大器

Resonant tunneling diode (RTD) technology is emerging as one of the promising semiconductor-based solid-state technologies for terahertz (THz) wireless communications. This article provides a review of the state of the art, with a focus on the THz RTD oscillator, which is the key component of RTD-based THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modeling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilize an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The article concludes with a discussion of the current technical challenges and possible strategies for future progress.

Davide Cimbri

Jue Wang

Abdullah Al-Khalidi

Edward Wasige

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

共振隧穿二极管高速太赫兹无线通信 - 综述

Yiran Cui

Panagiotis C. Theofanopoulos

Hrishikesh V. Panchawagh

Georgios C. Trichopoulos

Toward Advanced Security Fingerprint Biometrics Using Super-Resolution Terahertz Microscopy

面向超分辨率太赫兹显微技术的高级安全指纹生物识别

Zeyu Zhao

Pu Li

Yuehui Sun

Lijuan Liu

Xingyu Tao

Feifei Qin

Yuncai Wang

200∼ 390 GHz Photonic Terahertz Noise Source

200～390 GHz 光子太赫兹噪声源

Taylor Zachary

Frank Hegmann

Editorial Special Issue on Selected Emerging Trends in Terahertz Science and Technology

特刊社论：太赫兹科学与技术中的新兴趋势精选

Martijn D. Huiskes

Juan Bueno

Huasheng Zhang

Paolo Maria Sberna

Nuria Llombart

Andrea Neto

Enhanced Frequency Response in Coherent Photoconductive Pulsed Sources Using Leaky Wave Connected Arrays

Abbreviation	IEEE Trans. THz Sci. Technol.
Journal Impact	3.96
Quartiles(Global)	PHYSICS, APPLIED(Q2)

ISSN	2156-342X, 2156-3446
h-index	71

Publication Information	Publisher: Institute of Electrical and Electronics Engineers Inc.，Publishing cycle: ，Journal Type: journal，Open Access Journals: No
Basic data	Year of publication: 2011，Proportion of original research papers: 98.65%，Self Citation Rate:10.30%， Gold OA Rate: 14.78%

IEEE Transactions on Terahertz Science and Technology

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