研飞ivySCI (青藤学术）

IEEE Journal of the Electron Devices Society

短名	IEEE J. Electron Devices Soc.
Journal Impact	1.87
国际分区	ENGINEERING, ELECTRICAL & ELECTRONIC(Q3)
期刊索引	SCI Q3中科院 3 区

ISSN	2168-6734
h-index	45
国内分区	工程技术(3区)工程技术工程电子与电气(4区)

IEEE 电子器件学会期刊 (J-EDS) 是一本开放获取、完全电子化的科学期刊，发表从基础研究到应用研究的论文，这些论文在科学上严谨并与电子器件相关。 J-EDS 发表与电子和离子集成电路器件和互连的理论、建模、设计、性能和可靠性相关的原创和重要贡献，涉及绝缘体、金属、有机材料、微等离子体、半导体、量子效应结构、真空器件和新兴材料，在生物电子学、生物医学电子学、计算、通信、显示器、微机电、成像、微致动器、纳米器件、光电子学、光伏、功率 IC 和微传感器方面有应用。教程和评论论文这些主题也出版了。偶尔也会出版一些关于特定领域更深入和广度的论文集的特刊。J-EDS 出版所有被认为在技术上有效和原创的论文。

期刊主页投稿网址

涉及主题	物理工程类量子力学电气工程材料科学光电子学计算机科学化学电压有机化学晶体管电子工程纳米技术复合材料数学凝聚态物理图层（电子）热力学物理化学冶金光学电极电信
出版信息	出版商: Institute of Electrical and Electronics Engineers Inc.，出版周期: ，期刊类型: journal
基本数据	创刊年份: 2013，原创研究文献占比: 99.31%，自引率:5.00%， Gold OA占比: 97.60%
平均审稿周期	网友分享经验：9 Weeks

期刊引文格式

这些示例是对学术期刊文章的引用，以及它们应该如何出现在您的参考文献中。

并非所有期刊都按卷和期组织其已发表的文章，因此这些字段是可选的。有些电子期刊不提供页面范围，而是列出文章标识符。在这种情况下，使用文章标识符而不是页面范围是安全的。

只有1位作者的期刊

有2位作者的期刊

有3位作者的期刊

有5位以上作者的期刊

书籍引用格式

以下是创作和编辑的书籍的参考文献的示例。

学位论文引用格式

网页引用格式

这些示例是对网页的引用，以及它们应该如何出现在您的参考文献中。

专利引用格式

Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors

2024-1-1

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

2024-1-1

Design of Fast Response Back-Illuminated 3D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon

2024-1-1

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

2024-1-1

Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs

2024-1-1

Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes

2024-1-1

Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory

2024-1-1

1-Mbit 3D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

2024-1-1

Fast-Read Storage Performance by Thyristor Operation in 3D Flash Memory

2024-1-1

Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm

2024-1-1

Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board

2024-1-1

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

2024-1-1

Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing

2024-1-1

Fermi-Level Splitting Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector

2024-1-1

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

2024-1-1

A New Pixel Circuit for Micro-Light Emitting Diode Displays With Pulse Hybrid Modulation Driving and Compensation

2024-1-1

Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs

2024-1-1

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

2024-1-1

Energy-Efficient Annealing Process of Ferroelectric Hf0.5Zr0.5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing

2024-1-1

A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based On a-IGZO TFTs

2024-1-1

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

2024-1-1

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

2024-1-1

Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

2024-1-1

Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation

2024-1-1

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

2024-1-1

Optimization of Leaky Integrate-and-Fire Neuron Circuits Based on Nanoporous Graphene Memristors

2024-1-1

Fiber-Induced Optical Reflective Cavity in a High-Voltage SiC Photoconductive Switch to Improve Photoelectric Responsivity

2024-1-1

HfO2 Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors

2024-1-1

Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection

2024-1-1

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

2024-1-1

Highly Uniform Low Gray AMOLED Pixel using Stable Circuit and Duty Ratio Modulation Driving

2024-1-1

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

2024-1-1

A 3-D Bank Memory System for Low Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

2024-1-1

Electrical Effect of Nitrogen Implanted into LDD of MOSFETs

2024-1-1

High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

2024-1-1

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

2024-1-1

A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning

2024-1-1

Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems

2024-1-1

Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

2024-1-1

Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of L<sub>GS</sub> and L<sub>G</sub> on the Source Access Resistance

2024-1-1

High Power 190 GHz Frequency Doubler Base on GaAs Schottky Diode

2024-1-1

Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO2 Gate Insulator

2024-1-1

Design and Thermal Analysis of 2.5D and 3D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving

2024-1-1

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved By Two-Dimensionally Arranged Silicon Display Drivers

2024-1-1

Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology

2024-1-1

Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications

2024-1-1

A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes

2024-1-1

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With 111-Oriented Surface

2024-1-1

Balanced Performance Merit On Wind and Solar Energy Contact With Clean Environment Enrichment

2024-1-1

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach

2024-1-1

帮你贴心管理全部的文献
研飞ivySCI，高效的论文管理

投稿经验分享

分享我的经验，帮你走得更远

IEEE Journal of the Electron Devices Society

期刊引文格式

只有1位作者的期刊

有2位作者的期刊

有3位作者的期刊

有5位以上作者的期刊

书籍引用格式

学位论文引用格式

网页引用格式

专利引用格式

最新文章

Machine Learning-Based Modeling of Hot Carrier Injection in 40 nm CMOS Transistors

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

Design of Fast Response Back-Illuminated 3D Composite Electrode Silicon Detector Utilizing the RIE-Lag Phenomenon

Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures

Partially Isolated Dual Work Function Gate IGZO TFT With Obviously Reduced Leakage Current for 3D DRAMs

Wafer-Level Characterization and Monitoring Platform for Single-Photon Avalanche Diodes

Physics-Based Compact Model of Independent Dual-Gate BEOL-Transistors for Reliable Capacitorless Memory

1-Mbit 3D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Fast-Read Storage Performance by Thyristor Operation in 3D Flash Memory

Explicit Function Model of Electromagnetic Reliability for CMOS Inverters Under HPM Coupling Based on Physical Mechanism Analysis and Neural Network Algorithm

Potentiometric MgO Film pH Sensor Measurement Analysis and Integrated Flexible Printed Circuit Board

Investigation of Noise Properties in the InP HEMT for LNAs in Qubit Amplification: Effects From Channel Indium Content

Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing

Fermi-Level Splitting Induced Light-Intensity-Dependent Recombination in Fully Ultra-Wide Bandgap Deep-Ultraviolet Photodetector

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

A New Pixel Circuit for Micro-Light Emitting Diode Displays With Pulse Hybrid Modulation Driving and Compensation

Superior Turn-Off dV/dt Controllability From Suppression of Dynamic Avalanche in 3300V Scaled IGBTs

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Energy-Efficient Annealing Process of Ferroelectric Hf0.5Zr0.5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing

A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based On a-IGZO TFTs

Compatibility of the BSIM-CMG to the Low-Frequency Noise Simulation in Subthreshold and Linear Regions of Amorphous InZnO TFTs

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors

Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation

Characteristics Comparison of SiC and GaN Extrinsic Vertical Photoconductive Switches

Optimization of Leaky Integrate-and-Fire Neuron Circuits Based on Nanoporous Graphene Memristors

Fiber-Induced Optical Reflective Cavity in a High-Voltage SiC Photoconductive Switch to Improve Photoelectric Responsivity

HfO2 Thin Films by Chemical Beam Vapor Deposition for Large Resistive Switching Memristors

Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection

Vertical GaN Schottky Barrier Diode With Hybrid P-NiO Junction Termination Extension

Highly Uniform Low Gray AMOLED Pixel using Stable Circuit and Duty Ratio Modulation Driving

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

A 3-D Bank Memory System for Low Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time

Electrical Effect of Nitrogen Implanted into LDD of MOSFETs

High Speed Level-Down Shifter Using LTPO TFTs for Low Power and Interface Electronics

Discrete-Trap Effects on 3-D NAND Variability – Part I: Threshold Voltage

A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning

Bulk Carrier Contaminations and Their Effects on MOSFETs Under Energy Harvesting Systems

Robust Bidirectional Gate Driver on Array Based on Indium Gallium Zinc Oxide Thin-Film Transistor for In-Cell Touch Displays

Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of L<sub>GS</sub> and L<sub>G</sub> on the Source Access Resistance

High Power 190 GHz Frequency Doubler Base on GaAs Schottky Diode

Kr-Plasma Process for Conductance Control of MFSFET With FeND-HfO2 Gate Insulator

Design and Thermal Analysis of 2.5D and 3D Integrated System of a CMOS Image Sensor and a Sparsity-Aware Accelerator for Autonomous Driving

OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved By Two-Dimensionally Arranged Silicon Display Drivers

Cryogenic Small Dimension Effects and Design-Oriented Scalable Compact Modeling of a 65-nm CMOS Technology

Flicker Noise (1/f) in 45-nm PDSOI N-Channel FETs at Cryogenic Temperatures for Quantum Computing Applications

A New 13T4C LTPO MicroLED Pixel Circuit Producing Highly Stable Driving Current by Minimizing Effect of Parasitic Capacitors and Stabilizing Capacitor Nodes

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With 111-Oriented Surface

Balanced Performance Merit On Wind and Solar Energy Contact With Clean Environment Enrichment

Accurate Modeling of GaN HEMTs Oriented to Analysis of Kink Effects in S22 and h21: An Effective Machine Learning Approach

帮你贴心管理全部的文献.css-5myebc{font-size:14px;font-weight:var(--chakra-fontWeights-normal);margin-top:var(--chakra-space-1);margin-bottom:var(--chakra-space-1);}研飞ivySCI，高效的论文管理

帮你贴心管理全部的文献
研飞ivySCI，高效的论文管理