ACS Applied Electronic Materials

High-frequency wireless communication in consumer, defense, and space applications heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka wireless bands (∼8–40 GHz) are covered by GaN and GaAs-based devices, respectively, to the desired output power. GaAs-based high-electron mobility transistors (HEMTs) provide an unprecedented ultralow-noise high-frequency operation even at cryogenic temperatures, critically important for the high-fidelity amplification of weak qubit states in quantum computing. Increased output power from GaAs-based devices while maintaining low self-heating is an important but challenging objective. In this study, we used an epitaxial lift-off (ELO) technique to transfer GaAs nanomembranes onto foreign substrates (sapphire, Si, and SiC) and analyzed the thermal properties of the van der Waals-bonded GaAs films by nanosecond transient thermoreflectance (TTR). Electrothermal simulation of a GaAs HEMT was used to predict the thermal performance of the transferred devices, and a significant decrease of ∼30% in the device thermal resistance (Rth) was observed when SiC and diamond substrates were used. Our results also predict that the on-state channel temperature rise can be further decreased by ∼29 to 41% if the GaAs/substrate interface is improved by increased thermal boundary conductance. Our study finds that the ELO-transferred GaAs HEMTs onto foreign highly thermally conductive substrates can significantly improve their thermal performance and allow for higher output while keeping the on-state temperature within the safe operating margin.

Filip Gucmann

Biwei Meng

Aleš Chvála

Róbert Kúdela

Chao Yuan

Milan Ťapajna

Martin Florovič

Fridrich Egyenes

Peter Eliáš

Fedor Hrubišák

Jaroslav Kováč

Ján Fedor

Dagmar Gregušová

Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off

For the time being, a number of humidity measurement instruments made of a variety of different materials and operating on a number of different principles are accessible. There are numerous ways that may be utilized to categorize them. I begin by discussing the most commonly used designs for flexible humidity sensors. Following that, the section on humidity-sensitive materials, the sensing mechanism, the major properties of humidity sensors, and the influence of temperature on humidity sensors are discussed. The study concludes with a review of current research in this area, as well as the challenges that exist. The majority of the studies included in this review were published between 2020 and 2022. These remarks are expected to serve as an overview to humidity measurement for researchers and graduate students who are new to the field or who are already working in it and would like to learn more about the issue.

Burcu Arman Kuzubasoglu

Recent Studies on the Humidity Sensor: A Mini Review

湿度传感器的最新研究：小型综述

Two-dimensional (2D) van der Waals ferromagnets are regarded as a breakthrough for the 2D spintronics community, which has attracted a great deal of interest in developing low-dimension spintronic devices. Anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) are instrumental in realizing highly sensitive magnetic sensors and nonvolatile memory devices. Despite being discovered in many 2D ferromagnets, most exhibit relatively weak AMR and PHE effects, and their Curie temperature is below room temperature. Here, we report the effects of PHE and AMR at room temperature in the layered ferromagnet of Cr1.2Te2 flakes that exhibit high saturation magnetization and low coercivity, as evidenced by the angular-dependent transport measurements. The low-temperature magnetoresistance behavior of the Cr1.2Te2 flake reveals a truly remarkable 4-fold AMR effect, resulting from the material's high-term lattice symmetry, which is distinct from the traditional 2-fold AMR. These valuable insights provide a better understanding of high-order AMR in layered magnetic materials. Our findings demonstrate the immense promise of Cr1.2Te2 in driving the development of future 2D spintronic applications that operate at room temperature.

Xiang Ma

Meng Huang

Shasha Wang

Ping Liu

Ying Zhang

Yalin Lu

Bin Xiang

Anisotropic Magnetoresistance and Planar Hall Effect in Layered Room-Temperature Ferromagnet Cr1.2Te2

层状室温铁磁体Cr1.2Te2中的各向异性磁阻和面霍尔效应

Reconfigurable metasurfaces with versatile functionalities are highly demanded for various practical applications. In this paper, a varactor-based metasurface is proposed for dynamic and continuous modulation of reflection, transmission, and absorption in a single design. The proposed metasurface consists of a dielectric layer sandwiched by two metallic layers with different patterns, and varactors are loaded on both metallic layers. By controlling the bias voltages applied to the varactors, this metasurface can exhibit nearly full-range and continuous modulation of reflection, transmission, and absorption. Particularly, nearly perfect reflection, transmission, and absorption have been achieved by proper combinations of bias voltages. Coupled mode theory is further developed to offer a physical insight of the metasurface. The above concept is confirmed by numerical simulations and experiments in a microwave waveguide system. As this proposal concerns a metasurface with high degrees of freedom, it may find practical applications including radar cross-section reduction as well as smart radomes.

Xinyun Song

Xudong Bai

Weiren Zhu

Reconfigurable Metasurface for Nearly Full-Range and Continuous Modulation of Reflection, Transmission, and Absorption

可重构超表面实现近全范围连续调控反射、透射和吸收

MXenes are promising two-dimensional materials with good electrical conductivity, layered structure, biocompatibility, hydrophilicity, chemical inertness, and high surface area. Since the discovery of MXenes, they have been used for multiple applications, including energy storage, sensors, electronics, and optical devices. Theoretically, various MXenes are predicted by multiple studies, but few have been synthesized experimentally. The synthesized MXenes can possess various terminating groups that provide a great avenue to modify the surface of MXenes to fine-tune their chemical and physical properties. Notably, the terminating group of MXenes can be adjusted using diverse modification strategies, including covalent and noncovalent approaches. To advance future applications, it is necessary to have a deeper understanding of both theoretical and experimental approaches of MXenes. Although there have been some reviews on MXenes, less attention has been paid to the essential principle involved in surface modification using covalent and noncovalent chemistry and the controllable design of various MXenes compositions based on the theoretical calculations. This review focuses on a detailed understanding of the synthesis process of MXenes, as well as theoretical and experimental approaches toward the determination of their physical and chemical properties. In effect, both synthetic methods and postsynthesis functionalization will be complemented by density functional theory calculations. Furthermore, various functionalization strategies of MXenes have been discussed. Finally, we have provided an overview of current trends of modified MXenes in energy storage devices, electrocatalysts, and sensors applications with a brief comparison of the current state-of-the-art methods. This review will help researchers understand the feasibility of MXenes at the fundamental level for potential use in large-scale practical applications.

Dipankar Saha

Johnson Dalmieda

Vinay Patel

ACS Appl. Electron. Mater.

Surface-Modified MXenes: Simulation to Potential Applications

表面改性MXenes：从仿真到潜在应用

Xing Yi Ling

ACS Applied Materials &amp; Interfaces Family Early Career Forum 2024

《ACS应用材料与界面》家族早期职业论坛2024

This study focuses on the photovoltaic performance of MoSe2 nanosheet-based bulk heterojunction polymer solar cells, with particular attention paid to power conversion efficiency (PCE) and other important parameters. The PCE values of the pure solar cell are 5.88%, while those of NS1, NS2, and NS3 are 6.61, 8.39, and 7.37%, respectively. The optimized MoSe2 NS2 hybrid at 5 wt % in the active layer exhibits the highest PCE of 8.39%, the highest short-circuit current density of 15.865 mA/cm2, and the highest open-circuit voltage of 0.837 V which outperforming other configurations. Turning our attention to X-ray detectors, we find that the same concentration of MoSe2 NS2 works best, producing the highest sensitivity of 2.65 mA/Gy·cm2 and a collected current density of 8.85 μA/cm2. These results highlight how versatile MoSe2 NSs are in improving the performance of solar cells and X-ray detectors. MoSe2 NS2 at 5 wt % stands out as a particularly promising configuration for effective energy conversion and X-ray sensing applications.

Sikandar Aftab

Hailiang Liu

Maria Mukhtar

Dhanasekaran Vikraman

Sajjad Hussain

Jungwon Kang

Abdullah A. Al-Kahtani

Ghulam M. Mustafa

Burragoni Sravanthi Goud

Jae Hong Kim

Enhanced Photovoltaic Performance and X-ray Sensing Capabilities of MoSe2 Nanosheet-Based Bulk Heterojunction Polymer Solar Cells: A Comparative Study of Power Conversion Efficiency and Sensitivity

基于MoSe2纳米片的体异质结聚合物太阳能电池的光伏性能与X射线传感能力增强：功率转换效率与灵敏度的比较研究

Xueheng Zhuang

Mingqiang Ning

Lining Pan

Yu Gao

Qi Zhang

Chunyang Mu

Haoran Ma

Jiawei Li

Guoguo Tan

Qikui Man

Baogen Shen

Optimized Microwave Absorption and Structural Compression Sensing via Magnetic Fiber-Infused Aerogels with Reduced Graphene Oxide and Carbon Frameworks

通过磁性纤维注入的还原氧化石墨烯和碳骨架气凝胶实现优化的微波吸收和结构压缩传感

Debashis Panda

Arpan Acharya

Cheng-Yao Lo

Toward On-Receptor Computing: Electronic Nociceptor of an All-Oxide Invisible Biomimetic Memristor

迈向受体计算：全氧化物隐形仿生忆阻器的电子伤害感受器

Low-power flexible electronic and bioelectronic applications are in substantial demand of low-threshold-voltage organic field-effect transistors (OFETs). Detailed studies on surface and interfacial properties have shown that the annealing temperature, dipole moment, and dielectric constant of the processing solvents impact various device parameters such as the capacitance density, threshold voltage, stability, and density of charge trapping states. In this work, we achieved low-threshold-voltage operation in OFETs by employing a mixture of solvents comprising low and high dipole moments to process poly(methyl methacrylate) (PMMA). A blend with an optimized ratio of t-butyl alcohol and acetonitrile solvents was used to prepare the PMMA gate dielectric layer. Both t-butyl alcohol and acetonitrile have a boiling point of 82 °C, which implies a very low annealing temperature to treat the PMMA films. This helps in realizing flexible devices on unconventional substrates requiring low-temperature processing. The devices fabricated on glass and flexible substrates yielded good electrical performance, exhibiting a low threshold voltage of −3.5 ± 0.02 V, good bias stress stability, and mechanical flexibility. Through a combination of experimental studies, we aim to provide insights into how solvent choice influences the dielectric layer properties and the operation of OFETs. Therefore, our work demonstrates the efficacy and potential of a solvent engineering approach utilizing mixed solvents to treat PMMA as a gate dielectric layer, facilitating low-temperature and low-threshold-voltage flexible OFET devices.

Satayender K. Sangwan

Sk Shaharukh

Samit K. Ray

Achintya Dhar

Modulating Poly(methyl methacrylate) Gate Dielectric Behavior with Cosolvent and Low-Temperature Processing for Low-Threshold-Voltage Flexible Organic Field-Effect Transistors

调制聚甲基丙烯酸甲酯栅极介电行为：通过共溶剂和低温加工实现低阈值电压柔性有机场效应晶体管

Abbreviation	ACS Appl. Electron. Mater.
Journal Impact	4.27
Quartiles(Global)	MATERIALS SCIENCE, MULTIDISCIPLINARY(Q2)

ISSN	2637-6113
h-index	49

Publication Information	Publisher: American Chemical Society，Publishing cycle: ，Journal Type: journal，Open Access Journals: No
Basic data	Year of publication: 2019，Proportion of original research papers: 96.00%，Self Citation Rate:4.70%， Gold OA Rate: 6.68%

ACS Applied Electronic Materials

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