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The emergence of data-centric applications such as artificial intelligence (AI), machine learning, and the Internet of Things (IoT), has promoted surges in demand for storage memories with high operating speed and nonvolatile characteristics. HfO2-based ferroelectric memory technologies, emerging as a promising alternative, have attracted considerable attention for their high performance, energy efficiency, and full compatibility with the standard complementary metal-oxide-semiconductors (CMOS) process. These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), possess different data access mechanisms, individual merits and specific application boundaries in next-generation memories or even beyond von-Neumann architecture. This paper provides an overview of ferroelectric HfO2 memory technologies, addresses the current challenges and offers insights into future research directions and prospects.

Ming-Hao Shao

Rui-Ting Zhao

Houfang Liu

Wen-Jia Xu

Yi-Da Guo

Da-Peng Huang

Yu-Zhe Yang

Xin-Ru Li

Wancheng Shao

Peng-Hui Shen

Junwei Liu

Kuanmao Wang

Jinguo Zheng

Zhao-Yi Yan

Jian-Lan Yan

Tian Lu

Yi Yang

Tian-Ling Ren

Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications

基于HfO2铁电薄膜在非易失性存储器应用中的挑战与最新进展

Haiqi Gao

Yu Shao

Yipeng Chen

Junren Wen

Yuchuan Shao

Yueguang Zhang

Weidong Shen

Chenying Yang

All-optical Combinational Logical Units featuring Fifth-Order Cascade

全光组合逻辑单元：五阶级联特征

Tianyue Li

Mengjiao Liu

Jiahao Hou

Xing Yang

Shubo Wang

Shuming Wang

Shining Zhu

Din Ping Tsai

Zhenlin Wang

Chip-scale metaphotonic singularities: topological, dynamical, and practical aspects

芯片尺度超光子奇点：拓扑、动力学及实际应用方面

In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communications, object detection, consumer electronics, etc. As a critical intermediary between GaN HEMT devices and circuit-level applications, GaN HEMT large-signal models play a pivotal role in the design, application and development of GaN HEMT devices and circuits. This review provides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades. Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model are offered, including large-signal measurement setups, classical formulation methods, model classification, non-ideal effects, etc. In order to better serve follow-up research, this review also explores potential future directions for the development of GaN HEMT large-signal modeling.

Haorui Luo

Wenrui Hu

Yongxin Guo

On large-signal modeling of GaN HEMTs: past, development and future

关于GaN HEMT大信号建模：过去、发展与未来

Fan Yang

Zhaorui Liu

Xumin Ding

Yang Li

Cong Wang

Guozhen Shen

Carbon-based memristors for resistive random access memory and neuromorphic applications

基于碳的忆阻器用于电阻式随机存取存储器和神经形态应用

Junhong Feng

Li Zheng

Xinhong Cheng

Lingyan Shen

Xuetong Zhou

Wenyu Lu

Jiayu Zeng

Comprehensive Trade-off Strategy for SiC MOSFETs using Buried-MOS Configuration

使用埋层MOS配置的SiC MOSFET综合权衡策略

Tong Xu

Shulin Sha

Kai Tang

Xuefeng Fan

Jinguo Liu

Caixia Kan

Gangyi Zhu

Feifei Qin

Daning Shi

Mingming Jiang

On-chip integrated plasmon-induced high-performance self-powered Pt/GaN ultraviolet photodetector

片上集成等离子体诱导的高性能自供电Pt/GaN紫外光电探测器

Xinxin Su

Meng Chao

Xiuyou Han

Han Liang

Wenfu Zhang

Shuanglin Fu

Weiheng Wang

Mingshan Zhao

Silicon photonic integrated wideband RF self-interference cancellation chip for over-the-air in-band full-duplex communication

硅光子集成宽带射频自干扰消除芯片用于空口带内全双工通信

Xiaoshuai An

Sizhe Gui

Yingxin Li

Zhiqin Chu

Kwai Hei Li

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications

多功能光电设备用于超灵敏负正压传感应用

Xueyao Lu

Xiaoxuan Wang

Chunxiang Guo

Jiaqi Wu

Peng Wan

Junfeng Lu

Yongjin Wang

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

片上扭曲三维InGaN/GaN量子阱二极管及其收发共存特性

Publication Information	Publisher: Elsevier B.V.，Publishing cycle: ，Journal Type: journal，Open Access Journals: Yes
Basic data	Year of publication: 2022，Proportion of original research papers: ，Self Citation Rate:， Gold OA Rate:
Journal Fees	$1600Details
Average review cycle	11 weeks

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