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In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communications, object detection, consumer electronics, etc. As a critical intermediary between GaN HEMT devices and circuit-level applications, GaN HEMT large-signal models play a pivotal role in the design, application and development of GaN HEMT devices and circuits. This review provides an in-depth examination of the advancements in GaN HEMT large-signal modeling in recent decades. Detailed and comprehensive coverage of various aspects of GaN HEMT large-signal model are offered, including large-signal measurement setups, classical formulation methods, model classification, non-ideal effects, etc. In order to better serve follow-up research, this review also explores potential future directions for the development of GaN HEMT large-signal modeling.

Haorui Luo

Wenrui Hu

Yongxin Guo

On large-signal modeling of GaN HEMTs: past, development and future

关于GaN HEMT大信号建模：过去、发展与未来

Fan Yang

Zhaorui Liu

Xumin Ding

Yang Li

Cong Wang

Guozhen Shen

Carbon-based memristors for resistive random access memory and neuromorphic applications

基于碳的忆阻器用于电阻式随机存取存储器和神经形态应用

Xinxin Su

Meng Chao

Xiuyou Han

Han Liang

Wenfu Zhang

Shuanglin Fu

Weiheng Wang

Mingshan Zhao

Silicon photonic integrated wideband RF self-interference cancellation chip for over-the-air in-band full-duplex communication

硅光子集成宽带射频自干扰消除芯片用于空口带内全双工通信

Xiaoshuai An

Sizhe Gui

Yingxin Li

Zhiqin Chu

Kwai Hei Li

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications

多功能光电设备用于超灵敏负正压传感应用

Feifei Qin

Xueyao Lu

Xiaoxuan Wang

Chunxiang Guo

Jiaqi Wu

Xuefeng Fan

Mingming Jiang

Peng Wan

Junfeng Lu

Yongjin Wang

Gangyi Zhu

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

片上扭曲三维InGaN/GaN量子阱二极管及其收发共存特性

Jiayi Ouyang

Shengping Liu

Ziyue Yang

Wei Wang

Xue Feng

Yongzhuo Li

Yidong Huang

16-channel photonic solver for optimization problems on a silicon chip

16通道光子求解器用于硅芯片上的优化问题

Xumin Gao

Dongmei Wu

Tianlong Xie

Jialei Yuan

Mingyuan Xie

Haitao Zhao

Zheng Shi

III-Nitride MQW-Based Optoelectronic Sensors for Multifunctional Environmental Monitoring

基于III-氮化物多量子阱的光电传感器用于多功能环境监测

u9zg3I	quantum informationbig dataartificial intelligencenew chip materialsinternet of thingsedge computing
+5d/bs	e+/GRg: Elsevier B.V.，uzYam8: ，dxwaWB: journal，8x2mMQ: Xn96QY
ak9yM6	A7IHrH: 2022，sQJ/D8: ，sE9og+:， wzlKC/:
OtlFwL	$16008By/Hf
JrpmBe	11 weeks

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On large-signal modeling of GaN HEMTs: past, development and future

Carbon-based memristors for resistive random access memory and neuromorphic applications

Silicon photonic integrated wideband RF self-interference cancellation chip for over-the-air in-band full-duplex communication

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

Silicon photonic integrated wideband RF self-interference cancellation chip for over-the-air in-band full-duplex communication

A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications

On-chip warped three-dimensional InGaN/GaN quantum well diode with transceiver coexistence characters

16-channel photonic solver for optimization problems on a silicon chip

III-Nitride MQW-Based Optoelectronic Sensors for Multifunctional Environmental Monitoring