材料，尤其是晶体材料，为我们现代技术驱动的世界奠定了基础。材料的主导地位是通过详细的科学研究实现的。生长和评估各种材料的更完美晶体的技术的进步是当今许多先进技术的根源。晶体材料的演变和发展涉及由学术界和工业界的专职科学家进行的研究，涉及广泛的学科领域，包括生物学、化学、物理学、材料科学和工程学。在信息技术、光子学、能量存储和收集、环境保护、医药和食品生产中的关键应用需要对晶体生长的深入理解和控制。这可能涉及合适的生长方法和从块体到纳米尺度的材料表征。

Materials, especially crystal materials, form the foundation of our technology-driven world. The dominant role of materials is achieved through detailed scientific research. Advances in the techniques for growing and evaluating perfect crystals of various materials are the source of many advanced technologies today. The evolution and development of crystal materials involve research conducted by dedicated scientists from academia and industry, spanning a wide range of disciplines including biology, chemistry, physics, materials science, and engineering. Key applications in information technology, photonics, energy storage and collection, environmental protection, medicine, and food production require a deep understanding and control of crystal growth. This may involve suitable growth methods and characterization of materials from bulk to nanoscale.

材料，尤其是晶体材料，是现代技术驱动世界的基础。材料的主导地位通过深入的科学研究得以实现。晶体材料的生长和评估技术的进步是许多先进技术的根源。这些材料的演变和发展涉及学术界和工业界的专职科学家，涵盖生物学、化学、物理学、材料科学和工程学等多个学科领域。在信息技术、光子学、能源存储与收集、环境保护、医药和食品生产等关键应用中，对晶体生长的深入理解和控制至关重要。这可能需要采用合适的生长方法以及从宏观到纳米尺度的材料表征。

Progress in Crystal Growth and Characterization of Materials

Kirit Lad

Mohammed Maaroof

K.G. Raval

Arun Pratap

Fractal growth kinetics during crystallization of amorphous Cu50Zr50

非晶Cu50Zr50结晶过程中的分形生长动力学

The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial layer growth. Simultaneously, MOVPE itself took off in its triumphal course in solid state lighting production demonstrating its power as industrially relevant growth technique. Here, we review the recent progress in MOVPE growth of III–V-on-silicon heterostructures, preparation of the involved interfaces and fabrication of devices structures. We focus on a broad range of in situ, in system and ex situ characterization techniques. We highlight important contributions of density functional theory and kinetic growth simulations to a deeper understanding of growth phenomena and support of the experimental analysis. Besides new device concepts for planar heterostructures and the specific challenges of (001) interfaces, we also cover nano-dimensioned III–V structures, which are preferentially prepared on (111) surfaces and which emerged as veritable candidates for future optoelectronic devices.

Oliver Supplie

Oleksandr Romanyuk

Christian Koppka

Matthias Steidl

Andreas Nägelein

Agnieszka Paszuk

Lars Winterfeld

Anja Dobrich

Peter Kleinschmidt

Erich Runge

Thomas Hannappel

Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory

硅基III-V族金属有机气相外延：实验与理论

Koichi Kakimoto

Bing Gao

Xin Liu

Satoshi Nakano

Growth of semiconductor silicon crystals

半导体硅晶体的生长

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

Qiang Li

Kei May Lau

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

电子与光电子用(001)硅基上高度失配III-V材料的异质外延生长

Graphitic carbon nanoparticles are in high demand for sensing, health care, and manufacturing industries. Physical vapour deposition (PVD) methods are advantageous for in-situ synthesis of graphitic carbon particles due to their ability to produce large area distributions. However, the carbon particles can agglomerate, irrespective of the PVD method, and form coagulated structures while growing inside the vacuum chamber. The random shapes and sizes of these particles lead to non-uniform properties and characteristics, hence making them less attractive for numerous industrial applications, such as energy storage batteries and structural health monitoring. Therefore, the in-situ synthesis of isolated carbon particles produced in a single-step PVD process having control over size, shape, and large area distributions has remained inspiring for the past 30 years. This article gives an overview of characteristics, applications, industrial impact, and global revenue of graphite particles. A critical review on in-situ growth of graphitic carbon particles with different PVD methods is described with selected examples. A comprehensive summary compares the capability of different PVD techniques and corresponding carbon resources to produce graphitic particles with numerous sizes and shapes. Analysing the outputs of various PVD methods, a generalised four-stage model is explained to understand the in-situ growth of graphitic carbon particles, which start from seedings and grow as particles, clusters, and granular structures. It is concluded that the isolated carbon particles can be produced with specific size, shape, and distributions irrespective of the PVD method employed, by maintaining precise control over combinations of deposition system properties and process parameters.

Abdul Wasy Zia

Martin Birkett

Mohsin Ali Badshah

Munawar Iqbal

Progress in-situ synthesis of graphitic carbon nanoparticles with physical vapour deposition

石墨碳纳米颗粒物理气相沉积原位合成进展

Mujie Xu

Zining Wang

Rui Wang

Zhihong Yu

Zhenhao Sun

Bo Fu

Yujun Shi

Morphology features of β-Ga2O3 bulk crystals by EFG and CZ methods: A review

β-Ga2O3大块晶体的EFG和CZ方法形态特征：综述

Keshra Sangwal

Wiesław Z. Polak

Metastable zone width of different solute-solvent systems during cooling crystallization: Experimental observations and their interpretation

冷却结晶过程中不同溶质-溶剂体系的亚稳区宽度：实验观察及其解释

Viviana Scognamiglio

Valeria Nocerino

Bruno Miranda

Luca De Stefano

Emanuela Tempesta

Manuela Rossi

Francesco Baldassarre

Angela Altomare

Francesco Capitelli

Novel enhancing materials for biosensor design: The case studies of erbium-, gadolinium- and strontium-doped Ca10(PO4)6(OH)2 hydroxyapatite

用于生物传感器设计的创新增强材料：掺铒、钆和锶的Ca10(PO4)6(OH)2羟基磷灰石案例研究

Angelo Oliveira Silva

Alessandro Rogério Paulazzi

Karina Luzia Andrade

Ricardo Antonio Francisco Machado

Cintia Marangoni

Dachamir Hotza

Electrospray crystallization: A review on submicrometric and nanosized crystal synthesis

电喷雾结晶：亚微米和纳米尺寸晶体合成的综述

Since the beginning of humanity, man has generated various theories to explain the formation of the Universe, and the origin of life on Earth. However, even while these theories coincide sometimes, they are also subject to controversy, but it was Albert Einstein who postulated the theory of special and general relativity, in the understanding of the formation and functioning of the Universe. Meanwhile, for decades, experiments have been carried out regarding the origin of life in our planet. While these experiments have made relevant contributions in obtaining essential chemical blocks of life, obtaining a functional biomolecule as authoritative proof of how life began has not been found. This shows that not all variables implicated in the origin of life have been considered. For a better comprehension of the origin of life, the objective of this work was to synthesize calcium carbonate biomorphs in the presence of various biomolecules in atmospheric conditions that emulate the Precambrian era and also in the conditions of our current atmosphere. Our results show that both in the conditions that emulate the Precambrian era and in the current atmosphere, biomorphs show a spherical morphology, which is compatible with life forms. But a functional biomolecule that could indicate a beginning of life was not obtained. For the purpose of explaining the reason for which it has not been possible to obtain a pioneer organism, such as occurred in the primeval era, I have proposed a theory of life in which I have considered the interaction of the various lengths of wave of the electromagnetic spectrum, the magnetic fields of the various atoms, the energy and the physical laws that rule the Universe. The proposed equation for the origin of life (L = amc2) is grounded in the equation of special relativity (E = mc2) and general relativity for the Universe, equations that specify how the local density of matter and energy determine the geometry of space-time. For this aforementioned equation: L represents life, the letter "a" stands for absorption of a specific type of equivalent to the Higgs Boson, "m" corresponds to matter and finally "c" is the light speed. Considering the four factors of space-time-matter-energy that participated in the origin of life in the equation that I propose, the absorption that matter should have been also incorporated, which should be generated based on the Higgs Boson, also known as the particle of God, or perhaps, on another particle equivalent to that of the Higgs. The origin of life therefore fulfills the four factors of space-time-matter-energy in the aforementioned equation L = amc2.

Mayra Cuéllar-Cruz

The equation of life in the Universe: Biomorphs as reminiscence of the first forms of life

宇宙中的生命方程：生物形态作为生命最初形式的回忆

Abbreviation	Prog. Cryst. Growth Charact. Mater.
Journal Impact	4.63
Quartiles(Global)	MATERIALS SCIENCE, CHARACTERIZATION & TESTING(Q1)

ISSN	0960-8974, 1878-4208
h-index	55

Publication Information	Publisher: Elsevier Ltd，Publishing cycle: Quarterly，Journal Type: journal，Open Access Journals: No
Basic data	Year of publication: 1990，Proportion of original research papers: 0.00%，Self Citation Rate:4.40%， Gold OA Rate: 8.33%
Average review cycle	网友分享经验：>12周，或约稿
Average recruitment ratio	网友分享经验：较易

Progress in Crystal Growth and Characterization of Materials

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