ADVANCED ELECTRONIC MATERIALS 是一个跨学科论坛，用于在材料科学、物理学以及电子和磁性材料工程领域进行同行评议、高质量、高影响力的研究。除了基础研究外，它还包括电子和磁性材料、自旋电子学、电子学、器件物理和工程、微纳机电系统和有机电子学的物理和物理特性研究。

Advanced Electronic Materials is an interdisciplinary forum dedicated to high-quality, peer-reviewed research in the fields of materials science, physics, and electronic and magnetic materials engineering. The journal encompasses not only fundamental research but also studies on the physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro-nano electromechanical systems, and organic electronics.

《Advanced Electronic Materials》是一个跨学科的论坛，专注于材料科学、物理学以及电子和磁性材料工程领域的高质量、同行评审研究。该期刊不仅涵盖基础研究，还包括电子和磁性材料、自旋电子学、电子学、器件物理与工程、微纳机电系统以及有机电子学的物理特性研究。

Advanced Electronic Materials

Antiferroelectric tunnel junctions of La 0.7 Sr 0.3 MnO 3 /PbZrO 3 /Co fabricated by pulsed laser deposition and sputtering are reported for the first time. The current–voltage curves highlight the monostability type (threshold) resistive switching corresponding to the antiferroelectric behavior for the PbZrO 3 barrier down to ≈4 nm thickness. Tunneling electroresistance values up to 10 9 %, which is much higher than the usual values in ferroelectric tunnel junctions, are observed at room temperature. The resistive switching is attributed to a combination of the nonpolar to polar switching induced by an external field, leading to significant changes in the barrier heights, and the crossover from direct tunneling to Fowler–Nordheim tunneling. At low temperatures, the devices exhibit an inverse tunneling magnetoresistance, in which the resistance is higher in the parallel magnetization state, most probably caused by interfacial Zr and Co ions' hybridization influence on the spin polarization.

Geanina Apachitei

Jonathan J. P. Peters

Ana M. Sanchez

Dong Jik Kim

Marin Alexe

Adv. Electron. Mater.

Antiferroelectric Tunnel Junctions

反铁电隧道结

Abstract Previous experiments with barium titanate crystals have shown that electric field applied in the vicinity of its ferroelectric phase transition can be used to introduce peculiar ferroelectric domain walls, persisting to the ambient conditions: head‐to‐head charged walls compensated by the 2D electron gas. The present in situ optical observations allow the documentation of the early stage of this poling process in which the cubic and ferroelectric phases coexist, the latter being broken into multiple martensitic superdomains, separated by superdomain boundaries. It is revealed that the transient superdomains are subsequently converted into the regular ferroelectric domains, while the superdomain boundaries transform into the desired charged domain walls. In order to assign the observed transient domain patterns, to understand the shapes of the observed ferrolectric precipitates and their agglomerates as well as to provide the overall interpretation of the recorded domain formation process, the implications of the mechanical compatibility of the coexisting superdomain states are derived in the framework of the Wechsler–Lieberman–Read theory. These results also suggest that both the electric conductivity and interlinked motion of the superdomain boundaries and phase fronts are involved in the transport of the compensating charge carriers toward the charged domain wall location.

Petr S. Bednyakov

Jiří Hlinka

Adv Elect Materials

Charged Domain Walls in BaTiO3 Crystals Emerging from Superdomain Boundaries

BaTiO3晶体中超畴界衍生的带电畴壁

The essential step for developing neuromorphic systems is to construct more biorealistic elementary devices with rich spatiotemporal dynamics to exhibit highly separable responses in dynamic environmental circumstances. Unlike transistor‐based devices and circuits with zeroth‐order complexity, memristors intrinsically express some simple biomimetic functions. However, with only two‐terminal structure, precise control of operation principles to ensure large dynamic space, improved linearity and symmetry, multimodal operation as well as high‐order complexity is hard to achieve in a traditional memristor owing to its limited degree of freedom. Therefore, multiterminal memristors including both concrete terminals and virtual terminals (light, pressure, gas, ferroelectric polarity, etc.) have been proposed to obtain precise modulation of memristive characteristics. This review focuses on the recent progress in multiterminal memristors and their neuromorphic applications. The operation principle, application of multiterminal memristor on neuromorphic computing in different scenarios, existing challenges and future prospects are discussed.

Yan‐Bing Leng

Yu‐Qi Zhang

Ziyu Lv

Junjie Wang

Tao Xie

Shirui Zhu

Jingrun Qin

Runze Xu

Ye Zhou

Su‐Ting Han

Recent Progress in Multiterminal Memristors for Neuromorphic Applications

多端忆阻器在神经形态应用中的最新进展

Abstract Neuromorphic computing is expected to bridge cognitive behaviors with computing systems in an efficient, expandable, and biologically inspired way. A pivotal cognitive behavior is the attention mechanism, which is highly important in filtering and regulating spatio‐temporal information. Emerging neuromorphic devices hold prospect in utilizing their internal physical mechanisms for dynamic computing resources. Here, a basic top–down attention computing component consisting of a synaptic transistor and a neuron is proposed, where efficient information processing is realized by combining the inherent device dynamics and the feedback loop. A theoretical model is established in simulation to demonstrate the capabilities of such a computing system in information filtering and control. Notably, new dynamic circuit behaviors, such as conductance oscillation and activate function switching, are discovered from appropriate time parameters. The attention computing component contains rich dynamic behaviors, providing a power and area‐saving method to construct high‐complexity neuromorphic systems for spatio‐temporal signal preprocessing and control.

Chang Liu

Yanghao Wang

Teng Zhang

Rui Yuan

Yuchao Yang

An Attention Mechanism‐Based Adaptive Feedback Computing Component by Neuromorphic Ion Gated MoS2 Transistors

基于注意机制的自适应反馈计算组件通过神经形态离子门控二硫化钼晶体管实现

Abstract Most ternary Cu‐In‐Te chalcogenides have large bandgaps and high Seebeck coefficients, hence they have received much attention in the thermoelectric (TE) community. However, it is still challenging to reduce their thermal conductivities while sustaining their electrical properties; therefore, much work needs to be done. The phonon and electronic properties in ternary CuInTe 2 ‐based chalcogenides CuIn 1− x Ga x Te 2 : y InTe ( x = 0–0.3) with in situ formed nanoscale phase InTe precipitated in the grain boundaries is synergistically regulated. This regulation reduces the lattice thermal conductivity by a factor of ≈2 compared to pristine CuInTe 2 , due to phonon–phonon interaction and point defect scatterings introduced in the main phase at high temperatures for samples at x ≤ 0.2, combined with the phonon blocking effect from InTe at low and middle temperatures. At the same time, the power factor enhances by 73%. As a result, the TE performance improves significantly with a peak figure of merit value of 1.22 at ≈850 K.

Min Li

Yong Luo

Xiaojuan Hu

Gemei Cai

Zhongkang Han

Zhengliang Du

Jiaolin Cui

Synergistic Regulation of Phonon and Electronic Properties to Improve the Thermoelectric Performance of Chalcogenide CuIn1−xGaxTe2:yInTe (x = 0–0.3) with In Situ Formed Nanoscale Phase InTe

协同调控声子和电子特性以提升硫属化物CuIn1−xGaxTe2:yInTe（x = 0–0.3）的热电性能：原位形成的纳米相InTe

Abstract Quantum dot light‐emitting diodes (QLEDs) have emerged as promising candidates for next‐generation display technology, but the limited lifetime of QLEDs hampers their further commercialization. Despite extensive research that has been conducted for the last decades, the mechanism leading to the rapid degradation of QLEDs remains unclear. Here, the formation of hole traps is demonstrated as the critical reason for the degradation of QLEDs. Applying impedance measurements, an enhancement of the negative capacitance is observed and provides straightforward evidence for the formation of hole traps. The generated hole traps introduce additional trap‐assisted recombination of trapped holes with free electrons, as reflected by the evolution and voltage dependence of the electroluminescence spectra, leading to efficiency loss in degraded devices. By performing numerical simulations to model the degradation of QLEDs, the formation of hole traps is quantified as a function of aging time. The calculated hole trap density is consistent with that as measured from impedance spectroscopy, validating that the hole trap formation is the mechanism for the voltage drift and efficiency decrease of QLEDs under constant current stress.

Jiangxia Huang

Wenxin Lin

Shuxin Li

Jiahao Li

Haonan Feng

Dongchen Lan

Xiongfeng Lin

Yulin Guo

Wenlin Liang

Longjia Wu

Paul W. M. Blom

Quan Niu

Yuguang Ma

Hole Trap Formation in Quantum Dot Light‐Emitting Diodes Under Electrical Stress

电应力下量子点发光二极管中的空穴陷阱形成

Abstract Promising freeform deformable displays require highly stretchable interconnection lines and reliable, low‐resistance connections. To this end, a stretchable light‐emitting diode (LED) display with a molybdenum‐barriered multilayer electrode using liquid metal (LM) alloys with high reliability and stretchability under repeated deformations of 12 000 times and long‐term stability over 300 days is introduced. The developed multilayer‐stacked electrode shows consistent and stable stretchable electrical connections with long‐term reliability, even under continuous mechanical deformation. Thus, the developed display with micro‐ or mini‐LED components can be deformed, such as domes and twice folding like a handkerchief. Highly stretchable LM fine lines are developed by printing directly onto the acrylic adhesive layer, which enables high stretchability even under 100% uniaxial strain with a 100 µm narrow width. The stretchable display technology has successfully realized form‐free displays that flexibly deform into 3D shapes for advanced wearable and freeform applications.

Masashi Miyakawa

Hiroshi Tsuji

Tatsuya Takei

Toshihiro Yamamoto

Yoshihide Fujisaki

Mitsuru Nakata

Highly Stretchable LED Display Using Liquid Metal and Molybdenum‐Barriered Multilayer Electrodes with Long‐Term Reliability

使用液态金属和钼屏障多层电极的高延展性LED显示器，具有长期可靠性

Abstract Organic electrochemical transistors (OECTs) are gaining attention for their ease of fabrication, flexibility, and biocompatibility, with applications in biosignal sensing, neuromorphic computing, wearable health monitors, environmental monitoring, and bioelectronic interfaces. The interactions between ionic and electronic subcircuits in OECTs raise fundamental questions about the relationship between device design and performance. A major challenge is to meet specific integration, processing, and device performance requirements. While miniaturization of OECTs can improve transconductance and maximum operating frequency, it often compromises cost effectiveness and integratability. This work investigates an OECT architecture that incorporates both a crosslinkable printed aqueous electrolyte and a printed poly(3,4‐ethylenedioxythiophene):ploy(4‐styrenesulfonate) (PEDOT:PSS) top‐gate to achieve efficient gating, higher operating frequencies, and easy integration with low‐cost printing techniques. Improved performance is demonstrated in this top‐gate OECTs over conventional side‐gate structures, achieving sub‐millisecond device operation with channel lengths of 100 µm. This configuration shows practical potential for circuit integration, as demonstrated with a complementary inverter using an ambipolar material.

Ali Solgi

Anton Weissbach

Yahya Asl Soleimani

Yeohoon Yoon

Gert Krauss

Tommy Meier

Hsin Tseng

Mukundan Thelakkat

Karl Leo

Hans Kleemann

Integrated Top‐Gate Organic Electrochemical Transistors: A Scalable Approach for Fast and Efficient Operation

集成顶栅有机电化学晶体管：实现快速高效操作的可扩展方法

Abstract Electrolyte‐gated transistors (EGTs) are widely employed in bioelectronics due to their ability to bridge ionic and electronic phenomena in a single device. Among potential materials, reduced graphene oxide (rGO) has gained significant attention due to its ambipolar current response, quantum capacitance, and tunable conductivity. However, the rGO EGT dynamic behavior remains significantly unexplored. Here, the time‐dependent response of rGO EGTs is systematically investigated under gate voltage pulsing across different time scales (10 ms to 40 s) and amplitudes (up to |±0.8 V|). Significant charge memory is observed, particularly for long (40 s) pulses at 0.8 V, with effects also evident for shorter (1 s) and weaker stimuli (0.6 V). Multiple low‐level (0.1 V) fast pulsing (100 ms) further demonstrate charge retention post‐stimulation. All these characteristics are attributed to a complex interplay between ion entrapment within the rGO film, electrical double‐layer formation, and charge transfer processes. The stability of rGO EGTs under prolonged bias stress is also examined, aiming to contribute to the development of more robust devices. These findings revealed the complex role of electrolyte ions and electronic carriers governing the ion‐to‐electron transduction and charge memory effects in rGO EGTs, contributing to the advancement of the next‐generation bioelectronic devices.

Guilherme Segolin Selmi

Eduardo Rodrigues Lourenço Neto

Gabrielle Coelho Lelis

Anderson Kenji Okazaki

Antonio Riul

Maria Luisa Braunger

Rafael Furlan de Oliveira

Pulse Dynamics in Reduced Graphene Oxide Electrolyte‐Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion‐To‐Electron Transduction

氧化石墨烯电解质门控晶体管中的脉冲动力学：电荷记忆效应与离子-电子转换的调控机制

Abstract Recently, a capacitive array based on Hf 0.5 Zr 0.5 O 2 (HZO) has been proposed as an alternative to conventional resistive crossbar arrays for compute‐in‐memory (CIM). This array operates through a capacitive memory window (CMWε). This arises due to interface asymmetry caused by varying defect densities at the top and bottom interfaces. However, the current CMWε is insufficient, necessitating strategies to enhance it. In this study, the impact of stack design on CMWε is examined and it is demonstrated that it is possible to precisely control critical fields in I–V curves to achieve a significantly higher CMWε. A record high CMWε is achieved through an innovative nanolaminate design. The observed characteristics are explained by the Landau‐Ginzburg‐Devonshire (LGD) model and the presence of extra critical fields during I–V sweep. The final device exhibits excellent uniformity and high‐speed operation. Additionally, a substantial memory window for a non‐destructive read operation (NDRO) is confirmed using AC pulses. Alongside detailed electrical characterization, TEM and XRD analyses for an in‐depth investigation is employed to uncover the root cause of the superior characteristics achieved. Ultimately, for analog vector‐matrix multiplication (VMM) in a capacitive array, the carefully designed nanolaminate stack significantly outperforms HZO (0.5) in both output voltage and voltage swing.

Mostafa Habibi

Alireza Kashir

Seungyeol Oh

Hojung Jang

Hyunsang Hwang

Enhancing the Capacitive Memory Window of HZO FeCap Through Nanolaminate Stack Design

通过纳米层压堆叠设计增强HZO铁电电容的电容存储窗口

Abbreviation	Adv. Electron. Mater.
Journal Impact	5.46
Quartiles(Global)	PHYSICS, APPLIED(Q1)

ISSN	2199-160X
h-index	92

Publication Information	Publisher: Wiley-VCH Verlag，Publishing cycle: ，Journal Type: journal，Open Access Journals: Yes
Basic data	Year of publication: 2015，Proportion of original research papers: 93.59%，Self Citation Rate:1.90%， Gold OA Rate: 47.14%
Journal Fees	$3100Details
Average review cycle	10 weeks

Advanced Electronic Materials

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